thin film semiconductor

Recent studies on ferroelectric thin film/ semiconductor heterostructure are discussed in this paper.

综述了铁电薄膜/半导体异质结构研究近年来的新进展。

The I-U characteristic of metal-organic thin film-semiconductor

金属-有机薄膜-半导体的伏安特性

ZnO thin film is a novel semiconductor material with excellent performance.

ZnO薄膜是一种新型的、性能优良的半导体材料。

The Sol-Gel method is a technic which is convenient, cheap, and compatible with semiconductor technology and are widely used for BST thin film deposition.

溶胶&凝胶（Sol-Gel）法是比较适合制备BST薄膜的方便、廉价而与半导体工艺兼容的工艺。

Indeed, semiconductor equipment maker applied materials has started pushing into thin film solar equipment.

事实上，半导体设备制造商applied materials已开始进军薄膜太阳能设备领域。

CdS thin film, as N-type semiconductor layer and window layer in solar cell, its quality would directly affect the absorption layer which is prepared on the basis of it and is very important to the efficiency and lifetime of the batteries.

CdS在太阳电池中作为N型半导体层和窗口层，其质量将直接影响在此基础上制备的吸收层薄膜质量的好坏，对电池的效率和寿命是非常重要的。

At present, semiconductor nano-composite film materials, especially the Si-based nano-composite thin films, which have particular photoelectric performance and compatible fabrication processes of IC technology, are promising to be more widely used.

其中半导体纳米复合材料，尤其是硅系纳米复合薄膜，由于具有独特的光电性能，加之与集成电路相兼容的制备技术，有着广泛的应用前景。

Integration of ferroelectric thin film and semiconductor creates a new generation of non volatile memories. The ferroelectric non volatile memories have some advantages over the classical semiconductor memorizers, and they are the ideal memory chip for IC card.

铁电薄膜与半导体集成产生了新一代非易失存储器，与传统的半导体非易失存储器比较具有突出的优点，是新一代IC卡的理想存储芯片。

Research Progress in Ferroelectric Thin Film/ Semiconductor Heterostructure

铁电薄膜/半导体异质结构的研究进展

Growth for Thin Film Of Organic Semiconductor Pentacene

有机半导体材料并五苯薄膜的生长

Measurement of Refractive Index of Thin Film on Semiconductor Substrate

半导体衬底上薄膜折射率的测量

As a new type of wide bandgap semiconductor material, ZnO thin film is widely used.

ZnO薄膜作为一种新型宽带隙半导体材料，有其广泛应用。